Back gate finfet sram

ABSTRACT

A compact semiconductor structure having back gate(s) for controlling threshold voltages and associated method of formation is disclosed. Fabrication of the semiconductor structure starts with a semiconductor region formed directly on an underlying electrically isolating layer. Then, a mandrel and a spacer are formed on the semiconductor region. Next, a back gate region is formed separated from the semiconductor region by a back gate isolating layer and covered by an inter-gate isolating layer. Next, a portion of the semiconductor region beneath the mandrel is removed so as to form an active region adjacent to the removed portion of the semiconductor region. Finally, a main gate region is formed in place of the removed portion of the semiconductor region and on the inter-gate isolating layer. The main gate region is separated from the active region by a main gate isolating layer and separated from the back gate region by the inter-gate isolating layer.

BACKGROUND OF INVENTION

1. Technical Field

The present invention relates to back gate transistors, and moreparticularly, to back gate transistors fabricated using FinFETtechnologies.

2. Related Art

Dopant fluctuations are becoming a serious problem in Vt (thresholdvoltage) control in advanced semiconductor devices. As semiconductordevices become smaller and smaller, Vt control becomes more difficult. Aknown solution is to use back gates in the semiconductor devices tocontrol Vt. One serious problem with this solution is that the use ofback gates in semiconductor devices results in increased layoutcomplexity, and therefore, higher cost.

Therefore, there is a need for a novel semiconductor structure in whichback gates are formed with relatively less layout complexity. Also,there is a need for a method for forming the novel semiconductorstructure. In addition, there is always a need to increase the devicedensity of the novel semiconductor structure.

SUMMARY OF INVENTION

The present invention provides a semiconductor structure, comprising (a)a semiconductor substrate; and (b) N substructures on the substrate, Nbeing a positive integer, each of the N substructures comprising (i)first and second FinFET active regions, wherein the first FinFET activeregion includes at least first and second devices, and (ii) a back gateregion abutting and being sandwiched between the first and second FinFETactive regions, wherein the back gate region is shared by the first andsecond devices.

The present invention also provides a method for forming a semiconductorstructure, the method comprising the steps of (a) providing asemiconductor region directly on an underlying electrically isolatinglayer, the semiconductor region being covered on top by a mandrel and aspacer; (b) forming a back gate region separated from the semiconductorregion by a back gate isolating layer and covered by an inter-gateisolating layer; (c) removing a portion of the semiconductor regionbeneath the mandrel so as to form an active region adjacent to theremoved portion of the semiconductor region; and (d) forming a main gateregion in place of the removed portion of the semiconductor region andon the inter-gate isolating layer, the main gate region being separatedfrom the active region by a main gate isolating layer and beingseparated from the back gate region by the inter-gate isolating layer.

The present invention also provides a method for forming a semiconductorstructure, the method comprising (a) providing a substrate with anisolating layer including a semiconductor layer directly on top of anunderlying electrically isolating layer; (b) forming a mandrel and firstand second spacers on top of the semiconductor layer, the mandrel beingsandwiched between the first and second spacers; (c) etching portions ofthe semiconductor layer not covered by the mandrel and the first andsecond spacers; (d) forming a back gate isolating layer on exposedsurfaces of the semiconductor layer; (e) depositing a gate material onthe structure and planarizing a top surface of the structure such thatthe mandrel is exposed; (f) selectively forming an inter-gate insulatinglayer on the gate material such that the mandrel is still exposed to theatmosphere; (g) removing the mandrel; (h) etching the semiconductorlayer under the removed mandrel so as to form first and second activeregions being aligned with the first and second spacers, respectively;(i) forming a dielectric layer on exposed surfaces of the gate material;and (j) depositing the gate material on the structure so as to form amain gate region.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A-1F illustrate a semiconductor structure after each of a seriesof fabrication steps, in accordance with embodiments of the presentinvention.

FIG. 2 illustrates a top view of another semiconductor structure thatutilizes the semiconductor structure of FIG. 1F.

DETAILED DESCRIPTION

FIGS. 1A-1F illustrate a semiconductor structure 100 after each of aseries of fabrication steps, in accordance with embodiments of thepresent invention. FIG. 1A illustrates the structure 100 after a mandrel140 and spacers 130 a and 130 b are formed on an SOI (Substrate OnIsolation) wafer 110,115. In one embodiment, the SOI wafer 110,115 maycomprise an underlying electrically isolating layer 110 (e.g., a buriedoxide layer), a silicon (Si) layer 115 directly on top of the underlyingelectrically isolating layer 110, and a silicon substrate (not shown forsimplicity) below the electrically isolating layer 110. In oneembodiment, the spacers 130 a and 130 b can comprise silicon dioxide(SiO₂). The mandrel 140 can comprise silicon nitride. The mandrel 140and the spacers 130 a and 130 b are used to protect the portion of theSi layer 115 beneath it during later fabrication steps. In addition, thespacers 130 a and 130 b are used to define two active regions in the Silayer 115 (described infra).

FIG. 1B illustrates the structure 100 after an etching step followed bya thermal oxidation step are performed on the structure 100 of FIG. 1A,in accordance with embodiments of the present invention. Morespecifically, during the etching step, portions of the Si layer 115 notprotected by the mandrel 140 and the spacers 130 a and 130 b are etchedaway. As a result, the Si layer 115 (FIG. 1A) is reduced to the Siregion 120 (FIG. 1B). In the ensuing thermal oxidation step, some Simaterial of the Si region 120 exposed to the atmosphere reacts withoxygen at high temperatures to form back gate isolating layers 132 a and132 b.

FIG. 1C illustrates the structure 100 after a back gate deposition stepfollowed by a planarization step, and then a thermal oxidation step areperformed on the structure 100 of FIG. 1B, in accordance withembodiments of the present invention. More specifically, in the backgate deposition step, a layer (not shown) of a gate material (such aspoly-silicon) is deposited upon the entire structure 100 of FIG. 1B.Then, the top surface of the structure 100 is planarized such that themandrel 140 is again exposed to the atmosphere. A surface wherefabrication steps are directed is called a top surface. At this time,the layer of the gate material is reduced to regions 150 a, 150 b, 160a, and 160 b (wherein regions 150 a and 150 b are also shown in FIG. 2).Then, in the thermal oxidation step, some Si material of the layer 150a,150 b,160 a,160 b of the gate material exposed to the atmospherereacts with oxygen at high temperatures to form inter-gate isolatinglayers 160 a and 160 b. Hereafter, the poly-silicon regions 150 a and150 b are referred to as the back gate regions 150 a and 150 b,respectively.

FIG. 1D illustrates the structure 100 after the mandrel 140 and aportion of the Si region 120 are removed from the structure 100 of FIG.1C, in accordance with embodiments of the present invention. Morespecifically, first, the mandrel 140 can be etched away by,illustratively, chemical dip or Reactive Ion Etching (RIE). Then, theportion of the Si region 120 beneath the removed mandrel 140 is etchedaway, such as by RIE etching, typically using halogen-based chemistries.In this fabrication step, the spacers 130 a and 130 b are used asspacers to define the Si regions 120 a and 120 b, respectively.Hereafter, the Si regions 120 a and 120 b are referred to as the FinFETactive regions 120 a and 120 b, respectively.

FIG. 1E illustrates the structure 100 after a thermal oxidation stepfollowed by a main gate deposition step are performed on the structure100 of FIG. 1D, in accordance with embodiments of the present invention.More specifically, in the thermal oxidation step, some Si material ofthe FinFET active regions 120 a and 120 b exposed to the atmospherereacts with oxygen at high temperatures to form SiO₂ regions 134 a and134 b, respectively. Hereafter, the SiO₂ regions 134 a and 134 b arereferred to as the main gate isolating layers 134 a and 134 b,respectively. Then, in the main gate deposition step, a layer 170 of agate material (such as poly-silicon) is deposited upon the entirestructure 100. Then, a portion of the layer 170 is removed so as to formthe main gate region 170 as shown in FIG. 1F.

During the fabrication steps described above, dopants can be introducedso that the resulting FinFET active regions 120 a and 120 b can comprisedifferent transistors or devices. The structure 100 of FIG. 1F maycontain multiple FinFETs (Fin Field Effect Transistors). Because theFinFET active regions 120 a and 120 b occupy little area on a wafer, thestructure 100 has a relatively high device density.

FIG. 2 illustrates a top view of a semiconductor structure 200 thatutilizes the semiconductor structure 100 of FIG. 1F. More specifically,FIG. 1F illustrates a cross sectional view along the line 1F-1F shown inFIG. 2. For simplicity purposes, only FinFET active regions (such as theFinFET active region 210) and the gate regions (such as the main gateregion 170 and the back gate regions 150 a and 150 b) are shown in FIG.2. Isolating layers (such as the inter-gate isolating layers 160 a and160 b of FIG. 1F) are omitted in FIG. 2.

With reference to FIG. 2, in one embodiment, each back gate region ofthe semiconductor structure 200 is shared by (i.e., abuts), issandwiched between, and runs along two FinFET active regions. Forinstance, the back gate region 150 a is shared by and sandwiched betweenthe FinFET active regions 210 and 120 a. The phrase “runs along” meansthat the back gate region is shared by at least two devices that residein the same FinFET active region. For instance, the back gate region 150a is shared by at least two transistors M4 and M7 which both reside inthe same FinFET active region 120 a. In other words, the back gateregion 150 a runs along the FinFET active region 120 a. Similarly, theback gate region 150 a is also shared by at least two transistors M8 andM9 which both reside in the same FinFET active region 210. In otherwords, the back gate region 150 a runs along the FinFET active region210.

In one embodiment, two FinFET active regions sharing the same back gateregion have transistors of the same channel type. In other words, bothof the two FinFET active regions have only either n-channel transistorsor p-channel transistors (but not both). For example, both the FinFETactive regions 210 and 120 a may have only n-channel (n type)transistors.

In one embodiment, each main gate region of the semiconductor structure200 crosses over at least two FinFET active regions and forms devices(i.e., transistors) with them. For instance, the main gate region 276crosses over at least two FinFET active regions 210 and 120 a and formswith them the transistors M8 and M4, respectively. Similarly, the maingate region 170 crosses over two FinFET active regions 120 a and 120 band forms with them the transistors M1 and M2, respectively.

In one embodiment, the semiconductor structure 200 can comprise multipleSRAM (Static Random Access Memory) memory cells. For instance, thetransistors M1, M2, M3, M4, M5, and M6 residing in four FinFET activeregions 120 a, 120 b, 212, and 214 and abutting (i.e., sharing) threeback gate regions 150 a, 150 b, and 150 c can be electrically coupledtogether so as to form an SRAM memory cell 270. In general, one or moretransistors of an SRAM memory cell can reside in one active region andshare one back gate region. Also, it should be noted that theconfiguration layout of the SRAM memory cell 270 is just one example ofan SRAM memory cell layout. Moreover, 6-transistor SRAM cells are onlyone type of SRAM cells. In general, an SRAM cell can have any number oftransistors (e.g., three, eight, twelve, etc.) Regardless of its numberof transistors, an SRAM cell can have many options for different layoutand use of shared back gate regions.

In summary, with each back gate region running along (i.e., in parallel)and being shared by two FinFET active regions, each of which hasmultiple main gates crossing over in perpendicular directions, chip areais effectively used while Vt of the devices can be controlled using theback gate regions. Moreover, the fin-shaped active regions further savechip area. In other words, the present invention uses the FinFETtechnology with shared back gates to achieve the advantages of backgates while maintaining good device density and reasonable costs.

While particular embodiments of the present invention have beendescribed herein for purposes of illustration, many modifications andchanges will become apparent to those skilled in the art. Accordingly,the appended claims are intended to encompass all such modifications andchanges as fall within the true spirit and scope of this invention.

1. A semiconductor structure, comprising: (a) a semiconductor substrate;and (b) N substructures on the substrate, N being a positive integer,each of the N substructures comprising: (i) first and second FinFETactive regions, wherein the first FinFET active region includes at leastfirst and second devices, and (ii) a back gate region abutting and beingsandwiched between the first and second FinFET active regions, whereinthe back gate region is shared by the first and second devices.
 2. Thesemiconductor structure of claim 1, wherein the second FinFET activeregion includes at least third and fourth devices, and wherein the backgate region is shared by the third and fourth devices.
 3. Thesemiconductor structure of claim 2, further comprising a first main gateregion shared by the first and third devices.
 4. The semiconductorstructure of claim 3, further comprising a second main gate regionshared by the second and fourth devices.
 5. The semiconductor structureof claim 1, wherein the first and second FinFET active regions comprisesemiconductor devices of a same channel type.
 6. The semiconductorstructure of claim 1, wherein the N substructures comprise M SRAM memorycells, M being a positive integer.
 7. The semiconductor structure ofclaim 1, wherein the N substructures comprise M logic circuits, M beinga positive integer.
 8. The semiconductor structure of claim 1, whereinN>1.
 9. A method for forming a semiconductor structure, the methodcomprising the steps of: (a) providing a semiconductor region directlyon an underlying electrically isolating layer, the semiconductor regionbeing covered on top by a mandrel and a spacer; (b) forming a back gateregion separated from the semiconductor region by a back gate isolatinglayer and covered by an inter-gate isolating layer; (c) removing aportion of the semiconductor region beneath the mandrel so as to form anactive region adjacent to the removed portion of the semiconductorregion; and (d) forming a main gate region in place of the removedportion of the semiconductor region and on the inter-gate isolatinglayer, the main gate region being separated from the active region by amain gate isolating layer and being separated from the back gate regionby the inter-gate isolating layer.
 10. The method of claim 9, whereinstep (a) comprises: forming the mandrel and the spacer on a top surfaceof a semiconductor layer; and etching portions of the semiconductorlayer not covered by the mandrel and the spacer.
 11. The method of claim9, wherein step (b) comprises: oxidizing an exposed-to-atmospheresurface of the semiconductor region to form the back gate isolatinglayer; depositing a layer of a gate material on the underlyingelectrically isolating layer, the layer of the gate material beingseparated from the semiconductor region by the back gate isolatinglayer; planarizing a top surface the layer of the gate material; andoxidizing an exposed-to-atmosphere surface of the layer of the gatematerial to form the inter-gate isolating layer.
 12. The method of claim9, wherein step (c) comprises: removing the mandrel; and etching theportion of the semiconductor region beneath the removed mandrel to formthe active region.
 13. The method of claim 9, wherein step (d)comprises: oxidizing an exposed-to-atmosphere surface of the activeregion so as to form the main gate isolating layer; and depositing alayer of a gate material in place of the removed portion of thesemiconductor region and on the inter-gate isolating layer so as to formthe main gate region.
 14. The method of claim 9, wherein an interfacingsurface between the main gate isolating layer and the active region issubstantially perpendicular to a top surface of the structure.
 15. Themethod of claim 9, wherein an interfacing surface between the back gateisolating layer and the active region is substantially perpendicular toa top surface of the structure.
 16. The method of claim 9, wherein themandrel comprises silicon nitride.
 17. A method for forming asemiconductor structure, the method comprising: providing a substratewith an isolating layer including a semiconductor layer directly on topof an underlying electrically isolating layer; forming a mandrel andfirst and second spacers on top of the semiconductor layer, the mandrelbeing sandwiched between the first and second spacers; etching portionsof the semiconductor layer not covered by the mandrel and the first andsecond spacers; forming a back gate isolating layer on exposed surfacesof the semiconductor layer; depositing a gate material on the structureand planarizing a top surface of the structure such that the mandrel isexposed; selectively forming an inter-gate insulating layer on the gatematerial such that the mandrel is still exposed to the atmosphere;removing the mandrel; etching the semiconductor layer under the removedmandrel so as to form first and second active regions being aligned withthe first and second spacers, respectively; forming a dielectric layeron exposed surfaces of the gate material; and depositing the gatematerial on the structure so as to form a main gate region.
 18. Themethod of claim 17, wherein the step of forming the back gate isolatinglayer on exposed surfaces of the semiconductor layer comprises the stepof thermally oxidizing the exposed surfaces of the semiconductor layer.19. The method of claim 17, wherein the gate material comprisespolysilicon.
 20. The method of claim 17, wherein the step of selectivelyforming the inter-gate insulating layer comprises the step of thermallyoxidizing exposed surfaces of the gate material.